Thyristor-Diode Modules--SIRECTIFIER

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型号 TYPE	电气特性Electrical Characteristics										封装外形 Package Style	Datasheet
	IT			VDRM	ITSM	VTO	rT	dv/dt	TVJM	RthJC
	ITRMS	ITVM @TC		/VRRM	45°C/10ms	VTO	rT	dv/dt	TVJM	per chip
	A	A	°C	V	A	V	mΩ	V/μs	°C	K/W
STD800GK12PT	1256	800	85	1200	30000	0.90	0.21	1000	140	0.041	Fig.29	PDF
STD800GK14PT	1256	800	85	1400	30000	0.90	0.21	1000	140	0.041	Fig.29	PDF
STD800GK16PT	1256	800	85	1600	30000	0.90	0.21	1000	140	0.041	Fig.29	PDF
STD800GK18PT	1256	800	85	1800	30000	0.90	0.21	1000	140	0.041	Fig.29	PDF
STD800GK20PT	1256	800	85	2000	30000	0.90	0.21	1000	140	0.041	Fig.29	PDF
STD800GK22PT	1256	800	85	2200	30000	0.90	0.21	1000	140	0.041	Fig.29	PDF
STD800GK24PT	1256	800	85	2400	30000	0.90	0.21	1000	140	0.041	Fig.29	PDF
STD800GK26PT	1256	800	85	2600	30000	0.90	0.21	1000	140	0.041	Fig.29	PDF
STD800GK28PT	1256	800	85	2800	30000	0.90	0.21	1000	140	0.041	Fig.29	PDF
STD800GK30PT	1256	800	85	3000	30000	0.90	0.21	1000	140	0.041	Fig.29	PDF
SSAC200GK12B	314	200	85	1200	7900	0.95	1.05	1000	125	0.152	Fig.4	PDF

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