Thyristor-Diode Modules--SIRECTIFIER

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型号 TYPE	电气特性Electrical Characteristics										封装外形 Package Style	Datasheet
	IT			VDRM	ITSM	VTO	rT	dv/dt	TVJM	RthJC
	ITRMS	ITVM @TC		/VRRM	45°C/10ms	VTO	rT	dv/dt	TVJM	per chip
	A	A	°C	V	A	V	mΩ	V/μs	°C	K/W
STD116GK16B	180	116	85	1600	2250	0.8	2.4	1000	125	0.27	Fig. 18	PDF
STD116GK18B	180	116	85	1800	2250	0.8	2.4	1000	125	0.27	Fig. 18	PDF
STD181GK08B	284	181	85	800	6000	0.8	1.6	1000	125	0.155	Fig. 18	PDF
STD181GK12B	284	181	85	1200	6000	0.8	1.6	1000	125	0.155	Fig. 18	PDF
STD181GK14B	284	181	85	1400	6000	0.8	1.6	1000	125	0.155	Fig. 18	PDF
STD181GK16B	284	181	85	1600	6000	0.8	1.6	1000	125	0.155	Fig. 18	PDF
STD181GK18B	284	181	85	1800	6000	0.8	1.6	1000	125	0.155	Fig. 18	PDF
STD181GK20B	284	181	85	2000	6000	0.8	1.6	1000	125	0.155	Fig. 18	PDF
STD181GK22B	284	181	85	2200	6000	0.8	1.6	1000	125	0.155	Fig. 18	PDF
STD60GK08	94	60	85	800	1500	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD60GK12	94	60	85	1200	1500	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD60GK14	94	60	85	1400	1500	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD60GK16	94	60	85	1600	1500	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD60GK18	94	60	85	1800	1500	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD60GK20	94	60	85	2000	1500	0.85	3.7	1000	125	0.225	Fig.36	PDF
STD70GK08	110	70	85	800	1600	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD70GK12	110	70	85	1200	1600	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD70GK14	110	70	85	1400	1600	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD70GK16	110	70	85	1600	1600	0.85	3.7	1000	125	0.45	Fig. 36	PDF
STD70GK18	110	70	85	1800	1600	0.85	3.7	1000	125	0.45	Fig. 36	PDF

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