Thyristors（SCRs) 晶闸管（可控硅）--SIRECTIFIER

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型号 TYPE	电气特性Electrical Characteristics										封装外形 Package Style	Datasheet
	IT			VDRM	ITSM	VTO	rT	dv/dt	TVJM	RthJC
	ITRMS	ITVM @TC		/VRRM	45°C/10ms	VTO	rT	dv/dt	TVJM	per chip
	A	A	°C	V	A	V	mΩ	V/μs	°C	K/W
STT1000GK28PT	1570	1000	85	2800	37000	0.95	0.30	1000	140	0.035	Fig.29	PDF
STT1000GK30PT	1570	1000	85	3000	37000	0.95	0.30	1000	140	0.035	Fig.29	PDF
STT1000GK14PTWC	1570	1000	85	1400	37000	0.95	0.30	1000	140	0.010	Fig.66	PDF
STT1000GK16PTWC	1570	1000	85	1600	37000	0.95	0.30	1000	140	0.010	Fig.66	PDF
STT1000GK18PTWC	1570	1000	85	1800	37000	0.95	0.30	1000	140	0.010	Fig.66	PDF
STT1000GK20PTWC	1570	1000	85	2000	37000	0.95	0.30	1000	140	0.010	Fig.66	PDF
STT1000GK22PTWC	1570	1000	85	2200	37000	0.95	0.30	1000	140	0.010	Fig.66	PDF
STT1000GK24PTWC	1570	1000	85	2400	37000	0.95	0.30	1000	140	0.010	Fig.66	PDF
STT1000GK26PTWC	1570	1000	85	2600	37000	0.95	0.30	1000	140	0.010	Fig.66	PDF
STT1000GK28PTWC	1570	1000	85	2800	37000	0.95	0.30	1000	140	0.010	Fig.66	PDF
STT1000GK30PTWC	1570	1000	85	3000	37000	0.95	0.30	1000	140	0.010	Fig.66	PDF
STD25G08P	39	25	85	800	420	0.85	11	1000	125	1.68	GBJ(RS6M)	PDF
STD25G12P	39	25	85	1200	420	0.85	11	1000	125	1.68	GBJ(RS6M)	PDF
STD25G14P	39	25	85	1400	420	0.85	11	1000	125	1.68	GBJ(RS6M)	PDF
STD25G16P	39	25	85	1600	420	0.85	11	1000	125	1.68	GBJ(RS6M)	PDF
STD25G18P	39	25	85	1800	420	0.85	11	1000	125	1.68	GBJ(RS6M)	PDF
STD27GK08	42	27	85	800	520	0.85	11	1000	125	0.88	Fig. 36	PDF
STD27GK12	42	27	85	1200	520	0.85	11	1000	125	0.88	Fig. 36	PDF
STD27GK14	42	27	85	1400	520	0.85	11	1000	125	0.88	Fig. 36	PDF
STD27GK16	42	27	85	1600	520	0.85	11	1000	125	0.88	Fig. 36	PDF

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